PLASMA ASSISTED SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBER HAVING PLURAL GROUND PATH BRIDGES,申请号KR1020010028674-传众专利搜索

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发明名称	PLASMA ASSISTED SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBER HAVING PLURAL GROUND PATH BRIDGES
摘要
申请公布号	KR20010107727(A)	申请公布日期	2001.12.07
申请号	KR1020010028674	申请日期	2001.05.24
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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