FIELD EFFECT TRANSISTOR ARRANGEMENT WITH A TRENCH GATE ELECTRODE AND AN ADDITIONAL HIGHLY DOPED LAYER IN THE BODY REGION,申请号KR1020017007703-传众专利搜索

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发明名称	FIELD EFFECT TRANSISTOR ARRANGEMENT WITH A TRENCH GATE ELECTRODE AND AN ADDITIONAL HIGHLY DOPED LAYER IN THE BODY REGION
摘要
申请公布号	KR20010108029(A)	申请公布日期	2001.12.07
申请号	KR1020017007703	申请日期	2001.06.18
申请人		发明人
分类号	H01L29/772	主分类号	H01L29/772
代理机构		代理人
主权项
地址

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