发明名称 |
APPARATUS FOR PLASMA TREATMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for plasma treatment that can generate a high density plasma. SOLUTION: The distance d1 between an under surface of a radial line slot antenna 6 and a top surface of a dielectric plate 2 is set at 6 mm and the thickness d2 of the dielectric plate 2 is set at 30 mm so that an interval D between the under surface of the radial line slot antenna 6 for expressing wavelengths of a microwave as a unit of a distance and the under surface of the dielectric plate 2 becomes approximately 1/2. As a result, good standing waves can be formed in the region between the under surface of the radial line slot antenna 6 and a plasma exciting surface, and the high density plasma can be generated in a processing space 3. |
申请公布号 |
JP2001338918(A) |
申请公布日期 |
2001.12.07 |
申请号 |
JP20000156535 |
申请日期 |
2000.05.26 |
申请人 |
OMI TADAHIRO;ROHM CO LTD |
发明人 |
OMI TADAHIRO;INO KAZUHIDE;ARAKAWA TAKAHIRO |
分类号 |
H05H1/46;C23C16/511;C23F4/00;H01J37/32;H01L21/302;H01L21/3065;H01L21/31 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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