发明名称 APPARATUS FOR PLASMA TREATMENT
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for plasma treatment that can generate a high density plasma. SOLUTION: The distance d1 between an under surface of a radial line slot antenna 6 and a top surface of a dielectric plate 2 is set at 6 mm and the thickness d2 of the dielectric plate 2 is set at 30 mm so that an interval D between the under surface of the radial line slot antenna 6 for expressing wavelengths of a microwave as a unit of a distance and the under surface of the dielectric plate 2 becomes approximately 1/2. As a result, good standing waves can be formed in the region between the under surface of the radial line slot antenna 6 and a plasma exciting surface, and the high density plasma can be generated in a processing space 3.
申请公布号 JP2001338918(A) 申请公布日期 2001.12.07
申请号 JP20000156535 申请日期 2000.05.26
申请人 OMI TADAHIRO;ROHM CO LTD 发明人 OMI TADAHIRO;INO KAZUHIDE;ARAKAWA TAKAHIRO
分类号 H05H1/46;C23C16/511;C23F4/00;H01J37/32;H01L21/302;H01L21/3065;H01L21/31 主分类号 H05H1/46
代理机构 代理人
主权项
地址