| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical amplification type positive resist material having high resolution and improved resistance to the reduction of the film thickness of a pattern after development and to dry etching and suitable for use as a material forming a fine pattern particularly for the production of a very large scale integrated circuit. SOLUTION: The chemical amplification type positive resist material contains a compound having two or more functional groups of formula (1) in one molecule. The resist material has superior dry etching resistance, high sensitivity, high resolution and process adaptability and suppresses the reduction of the film thickness of a pattern after development with an aqueous alkali solution. In the formation of a contact hole pattern, a step for making the size of contact holes smaller by heating called thermal flow is easily controlled because the compound having two or more functional groups capable of crosslinking with a high molecular compound is contained, a process with high adaptability is provided and a fine contact hole pattern particularly for the production of a very large scale integrated circuit can be formed because of excellence in pattern profile. |
