| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer for forming an IR light emitting LED having high luminous output. SOLUTION: A first P-type layer (Ga1-XAlX1As, 0.13<=X1<=0.40), a P-type clad layer (Ga1-X2AlX2As, 0.23<=X2<=0.46), a P-type active layer (Ga1-X3AlX3As, 0<=X3<=0.03) whose emission wavelength is in a range of 850-900 nm, and an N-type clad layer (Ga1-X4AlX4As, 0.13<=X4<=0.40) are laminated in order on a P-type GaAs single crystal substrate by liquid epitaxial method. After that, the P-type GaAs single crystal substrate is eliminated. In this epitaxial wafer for an IR light emitting diode, the carrier concentration of the N-type clad layer is in a range of 1×1017-1×1018 cm-3, the sulfur concentration is at most 3×1016 atoms/cm3, and the thickness of the N-type clad layer is in a range of 20-50 μm. |
