| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, a method for manufacturing the same and a substrate for such a semiconductor device having a substrate body of a sapphire, SiC, GaN or the like and an AlxGayInzN (x+y+z=1, x, y, z>=0) film having good crystallinity and flatness and epitaxially deposited on its surface directly or via a buffer film. SOLUTION: The sapphire substrate body 21 having a high melting point metal film 22 formed on a rear surface 21b is introduced into an MOCVD chamber 23 so that the metal film is opposed to a heater 25 via a susceptor 24, and the AlxGayInzN film 27 is formed at a reduced pressure. Since the metal film 22 absorbs an infrared ray during film forming, the substrate body is effectively heated even by a radiation in addition to a thermal conduction by contacting and the AlzGayInzN (x+y+z=1, x, y, z>=0) films 26 to 29 each having excellent crystallinity and flatness can be stably formed. Since a load of the heater 25 is alleviated, a lifetime of the heater is prolonged, a maintenance is facilitated and its manufacturing cost is reduced. |
