| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a compound semiconductor multilayer epitaxial substrate that drastically reduces a process in the manufacture of the multilayer epitaxial substrate and further is suited for the multilayer epitaxial substrate having special structure that was not possible by a conventional method. SOLUTION: In this manufacturing method of the compound semiconductor multilayer epitaxial substrate, at least one portion of the film thickness, impurity concentration, and composition of each epitaxial layer for composing the multilayer epitaxial substrate is determined by a theoretical calculation so that specific electrical characteristics can be met, and epitaxial growth is executed according to the determined values.
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