| 摘要 |
PROBLEM TO BE SOLVED: To provide a signal potential converting circuit which can speedily converts a signal potential. SOLUTION: In a signal potential converting circuit for a DRAM, a P-channel MOS transistor(TR) 5 is connected in parallel to a P-channel MOS TR 6 for charging a node N6 and turned on in a pulsating way in response to a leading edge of an input signal VI. Further, the current driving force of the P-channel MOS TR 6 is set about 1/10 time as large as that of an N-channel MOS TR 10 for discharging the node N6. Nodes N6 and N7 can, therefore, be charged and discharged fast and the conversion of a signal potential can speedily be performed.
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