| 摘要 |
PURPOSE: To provide a layout of high breakdown voltage wiring which can flatten the wiring and also which is high in dielectric breakdown strength to upper wiring, even at the end of lower wiring, and can withstand high breakdown voltage dielectric resistance. CONSTITUTION: High breakdown voltage wiring 5 μm or over in line width is provided on a substrate, and dummy wiring is arranged to adjoin this high breakdown voltage wiring in the same layer. The interval between the high breakdown voltage wiring and the dummy wiring is 2 μm or smaller, and the line width of the dummy wiring is 1.5 μm or larger, and a silica coating is applied on the interlayer insulating film 4 made on the high breakdown voltage wiring and the dummy wiring, and then it is etched back, whereby the silica coatings 5 and 6 are filled in the recesses 4a and 4b at the surface of the interlayer insulating film 4, thus flattening is performed.
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