| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic neutral line discharge plasma generation device for ion implantion system, plasma etching system, plasma CVD system or the like, which is free of interference or disturbances by an external magnetic fields. SOLUTION: This device comprises a magnetic field generating means for forming a loop-like magnetic neutral lines corresponding to the position of zero magnetic field continuously present inside a vacuum chamber, which is provided on the outside of the sidewall of the vacuum chamber, an electric field generating means for applying an alternating electric field along the loop- like magnetic neutral line formed by the magnetic generating means to generate a discharge plasma in the loop-like magnetic neutral line, and a yoke member made of a high magnetic permeability material and provided on the outside of the magnetic field generations means. |
