| 摘要 |
<p>PROBLEM TO BE SOLVED: To remove nickel from a crystallized silicon film by utilizing the nickel. SOLUTION: In this manufacturing method of a thin-film transistor, a metal element 103 for promoting the crystallization of silicon is introduced to a first amorphous semiconductor film 102, the first amorphous semiconductor film is heated for forming a crystalline semiconductor film 104, a second amorphous semiconductor film 106 containing an element belonging to the 15th family in a periodic table is formed on the crystalline semiconductor film, the crystalline semiconductor film and second amorphous semiconductor film are heated, and the crystalline semiconductor film 104 after heating is used.</p> |
