| 发明名称 |
METHOD FOR ETCHING ORGANIC FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR FORMING PATTERN |
| 摘要 |
PROBLEM TO BE SOLVED: To make the cross section of a recessed part formed on an organic film perpendicular or taper in the method of etching the organic film. SOLUTION: The organic film is etched by using plasma composed of a compound containing carbon, hydrogen and nitrogen such as an etching gas whose principal component is methylamine. |
| 申请公布号 |
JP2001338908(A) |
申请公布日期 |
2001.12.07 |
| 申请号 |
JP20000155828 |
申请日期 |
2000.05.26 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NAKAGAWA HIDEO |
| 分类号 |
G03F7/40;H01L21/027;H01L21/302;H01L21/3065;H01L21/311;H01L21/768;H01L23/522;(IPC1-7):H01L21/306 |
主分类号 |
G03F7/40 |
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