| 摘要 |
PROBLEM TO BE SOLVED: To realize rapidity in operation especially at a low voltage by realizing rapidity of an operation velocity of a CMOS circuit and at the same time enabling low consumption power in a semiconductor integrated circuit device which is constituted of a CMOS circuit. SOLUTION: The device has a main circuit constituted of a CMOS circuit, a change-over circuit, a substrate control circuit and a switch circuit, and switches a substrate bias of a MOS transistor constituting a main circuit to the state of application to a usual power supply voltage and a ground voltage, and the state of application to a forward bias in accordance with a switching signal of a switching circuit. A switching circuit outputs a switching signal on detecting decline of a power supply voltage, etc. As a result, it is possible to provide a CMOS circuit and a CMOS-LSI chip constituted of it, and a semiconductor integrated circuit device which realize low consumption power by cutting leakage current during standby in a high voltage region and realizes improvement of operation velocity in a low voltage region, by enlarging an operational voltage range of a CMOS circuit in a semiconductor integrated circuit device constituted of a CMOS circuit.
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