发明名称 |
Method for manufacturing a ferroelectric random access memory device |
摘要 |
An improved method of manufacturing a capacitor structure for a ferroelectric random access memory (FeRAM) device on an active matrix having a first insulating layer comprising the steps of forming a buffer on the first insulating layer, a bottom electrode on the buffer, a capacitor thin film on the bottom electrode and a top electrode on the capacitor thin film. A second insulating layer is formed on the top electrode, the capacitor thin film and the first insulating layer, and then patterned and etched only once to form both a storage node contact hole and a cell plate contact hole. The capacitor structure is completed by forming a metal interconnection pattern on the second insulating layer and the contact holes to provide connection to the storage node and the cell plate.
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申请公布号 |
US2001048622(A1) |
申请公布日期 |
2001.12.06 |
申请号 |
US20010867419 |
申请日期 |
2001.05.31 |
申请人 |
KWON O-SUNG;PARK CHAN-RO;SEOL YEO-SONG |
发明人 |
KWON O-SUNG;PARK CHAN-RO;SEOL YEO-SONG |
分类号 |
H01L21/302;H01L21/02;H01L21/3065;H01L21/311;H01L21/768;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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