| 发明名称 |
Method for etching organic film, method for fabricating semiconductor device and pattern formation method |
| 摘要 |
An organic film is etched by using plasma generated from an etching gas including a first gas containing, as a principal constituent, a compound including carbon, hydrogen and nitrogen and a second gas including a nitrogen component.
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| 申请公布号 |
US2001049150(A1) |
申请公布日期 |
2001.12.06 |
| 申请号 |
US20010854579 |
申请日期 |
2001.05.15 |
| 申请人 |
NAKAGAWA HIDEO;HAYASHI TOSHIO;MORIKAWA YASUHIRO |
发明人 |
NAKAGAWA HIDEO;HAYASHI TOSHIO;MORIKAWA YASUHIRO |
| 分类号 |
G03F7/40;H01L21/027;H01L21/302;H01L21/3065;H01L21/311;H01L21/768;(IPC1-7):H01L21/00 |
主分类号 |
G03F7/40 |
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