| 摘要 |
<p>A polishing pad and a process for polishing a surface of a semiconductor device or a precursor thereto, and for planarizing metal damascene structures on a semiconductor wafer, a polishing layer of the pad having a hardness of about 40-70 Shore D; a tensile Modulus of about 100-2,000 MPa at 40°C; and an E' ratio at 30°C-90°C of about 1-5. Each linear dimension of said pad changes by less than about 1 % and the hardness of said pad decreases by less than about 30 % when said pad is immersed in deionized water for 24 hours at an ambient temperature of about 25°C.</p> |
