Apparatus for coating a semiconductor wafer in the production of microelectronics has a gas inlet system for introducing process gases into the process chamber via inlets

摘要

Apparatus for coating a semiconductor wafer (12) comprises a process chamber (7) for receiving the wafer; a heater for thermally treating the wafer; and a gas inlet system for introducing at least two process gases into the chamber. The gases are introduced via at least two inlets (17, 19). An Independent claim is also included for a process for coating a semiconductor wafer using the above apparatus. Preferred Features: The inlets for the process gases are directed parallel to the surface of the wafer. The inlets are arranged in two planes. At least one of the process gases is titanium chloride, ammonia or SiH4.