发明名称 |
Semiconductor device having a silicide layer with silicon-rich region and method for making the same |
摘要 |
A semiconductor device includes a substrate; a semiconductor region formed on the substrate; and a silicide layer as a contact layer formed directly contacting the semiconductor region; wherein the silicide layer is made to be rich in silicon while including such a silicon amount that contact resistance is significantly lowered and a method for making a semiconductor device which has the steps of: forming selectively a given conductive type semiconductor region on a substrate; forming a Co-Si alloy layer on the entire surface of the semiconductor region; introducing Si into the entire surface or part of the Co-Si alloy layer; and conducting the thermal treatment of the substrate to react the introduced Si with the Co-Si alloy layer and the Ti-included layer to form a Si-rich silicide layer including such a silicon amount that contact resistance is significantly lowered.
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申请公布号 |
US2001049194(A1) |
申请公布日期 |
2001.12.06 |
申请号 |
US20010921882 |
申请日期 |
2001.08.06 |
申请人 |
NEC CORPORATION |
发明人 |
ODA NORIAKI |
分类号 |
H01L21/28;H01L21/285;H01L21/768;H01L21/8238;H01L27/092;H01L29/45;H01L29/78;(IPC1-7):H01L21/44;H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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