发明名称 METHOD FOR IMPROVING PERFORMANCE OF HIGHLY STRESSED ELECTRICAL INSULATING STRUCTURES
摘要 Removing the electrical field from the internal volume of high-voltage structures; e.g., bushings, connectors, capacitors, and cables. The electrical field is removed from inherently weak regions of the interconnect, such as between the center conductor and the solid dielectric, and places it in the primary insulation. This is accomplished by providing a conductive surface on the inside surface of the principal solid dielectric insulator surrounding the center conductor and connects the center conductor to this conductive surface. The advantage of removing the electric fields from the weaker dielectric region to a stronger area improves reliability, increases component life and operating levels, reduces noise and losses, and allows for a smaller compact design. This electric field control approach is currently possible on many existing products at a modest cost. Several techniques are available to provide the level of electric field control needed. Choosing the optimum technique depends on material, size, and surface accessibility. The simplest deposition method uses a standard electroless plating technique, but other metalization techniques include vapor and energetic deposition, plasma spraying, conductive painting, and other controlled coating methods.
申请公布号 US2001048967(A1) 申请公布日期 2001.12.06
申请号 US19980109787 申请日期 1998.07.02
申请人 WILSON MICHAEL J.;GOERZ DAVID A. 发明人 WILSON MICHAEL J.;GOERZ DAVID A.
分类号 H01B17/28;H01B17/42;H01B17/62;H01R13/03;H01R13/53;H03K3/537;(IPC1-7):B05D5/12;B05D7/22 主分类号 H01B17/28
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