| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
Circuit (10) has a dual layer gate dielectric (29) formed over a semiconductor substrate (14). The gate dielectric includes an amorphous layer (40) and a monocrystalline layer (42). The monocrystalline layer typically has a higher dielectric constant than the amorphous layer. |
| 申请公布号 |
WO0193336(A1) |
申请公布日期 |
2001.12.06 |
| 申请号 |
WO2001US13610 |
申请日期 |
2001.04.26 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
EISENBEISER, KURT;WANG, JUN;DROOPAD, RAVINDRANATH |
| 分类号 |
H01L29/78;H01L21/28;H01L29/51 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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