发明名称 |
Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof |
摘要 |
A wavelength-variable semiconductor laser includes: a submount; and a semiconductor laser chip being mounted onto the submount and having at least an active layer region and a distributed Bragg reflection region, wherein the semiconductor laser chip is mounted onto the submount in such a manner that an epitaxial growth surface thereof faces the submount and a heat transfer condition of the active layer region is different from a heat transfer condition of the distributed Bragg reflection region. Moreover, an optical integrated device includes at least a semiconductor laser and an optical waveguide device both mounted on a submount, wherein the semiconductor laser is the wavelength-variable semiconductor laser as set forth above.
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申请公布号 |
US2001048705(A1) |
申请公布日期 |
2001.12.06 |
申请号 |
US20010907369 |
申请日期 |
2001.07.17 |
申请人 |
KITAOKA YASUO;MIZUUCHI KIMINORI;YAMAMOTO KAZUHISA |
发明人 |
KITAOKA YASUO;MIZUUCHI KIMINORI;YAMAMOTO KAZUHISA |
分类号 |
G02B6/12;G02B6/42;G02F1/377;H01S5/00;H01S5/02;H01S5/022;H01S5/024;H01S5/026;H01S5/042;H01S5/0625;H01S5/125;(IPC1-7):H01S5/00 |
主分类号 |
G02B6/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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