发明名称 |
Vertical cavity surface emitting laser diode has metalization layer forming contacting layer on top side, e.g. with annular contact |
摘要 |
The VCSEL has an active layer (2) between a first reflector (3) and a second reflector (4). A contact (7) is provided on a top side for current injection. The contact is a part of an electrically conductive contacting layer, which comprises a part in the form of a contact surface (8) for an electrical connection. The contacting layer is a metalization layer. The contact may be an annular contact which leaves open a region of the top side for the emission of radiation.
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申请公布号 |
DE10026262(A1) |
申请公布日期 |
2001.12.06 |
申请号 |
DE20001026262 |
申请日期 |
2000.05.26 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH & CO. OHG |
发明人 |
WIPIEJEWSKI, TORSTEN |
分类号 |
H01S5/042;H01S5/183;(IPC1-7):H01S5/183 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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