发明名称 Vertical cavity surface emitting laser diode has metalization layer forming contacting layer on top side, e.g. with annular contact
摘要 The VCSEL has an active layer (2) between a first reflector (3) and a second reflector (4). A contact (7) is provided on a top side for current injection. The contact is a part of an electrically conductive contacting layer, which comprises a part in the form of a contact surface (8) for an electrical connection. The contacting layer is a metalization layer. The contact may be an annular contact which leaves open a region of the top side for the emission of radiation.
申请公布号 DE10026262(A1) 申请公布日期 2001.12.06
申请号 DE20001026262 申请日期 2000.05.26
申请人 OSRAM OPTO SEMICONDUCTORS GMBH & CO. OHG 发明人 WIPIEJEWSKI, TORSTEN
分类号 H01S5/042;H01S5/183;(IPC1-7):H01S5/183 主分类号 H01S5/042
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