发明名称 METHODS AND APPARATUS FOR PLASMA PROCESSING
摘要 <p>Plasma processing is carried out at pressures of about atmospheric pressure, at pressures below atmospheric pressure, or at pressures above atmospheric pressure. The plasmas are generated using a RF power source and a rectangular waveguide. The plasmas can be used for applications such as materials processing and carrying out chemical reactions.</p>
申请公布号 WO2001093315(A2) 申请公布日期 2001.12.06
申请号 US2001017266 申请日期 2001.05.25
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址