发明名称 High speed modulation utilizing field effect for return path
摘要 A system and method for achieving high speed modulation of semi-conductor devices, such as VCSELs, utilizing field effect to confine a signal path is described. In semi-conductor devices operating at high data rates the configuration of connector rails and signal paths can become a limiting factor. Thc present invention provides an arrangement in which the signal return path is confined relative to the energizing signal path by a field effect in a common conductor extending under the signal path.
申请公布号 US2001048695(A1) 申请公布日期 2001.12.06
申请号 US20010796755 申请日期 2001.03.01
申请人 SAWYER DAVE;ISAKSSON JAN 发明人 SAWYER DAVE;ISAKSSON JAN
分类号 H01S5/022;H01S5/042;H01S5/062;H01S5/183;H01S5/40;(IPC1-7):H01S3/10 主分类号 H01S5/022
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