| 摘要 |
A CMOS device includes a reverse electric conduction type well (2) is formed on a monoelectric conduction type semiconductor substrate (1), a first MOS transistor (3) of a reverse electric conduction type channel is formed on a surface of the semiconductor substrate, and a second MOS transistor (4) of monoelectric conduction type channel is formed on a surface of the well. In the present invention, resistance elements (8R, 7R, 2R) are formed in the semiconductor substrate on a lower side of a thick field oxide film (9) covering a surface of the semiconductor substrate. Further, a second resistance element (11R) composed of a polycrystal silicon layer is formed on an upper side of the field oxide film.
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