COMPONENT WITH A TRANSISTOR AND METHOD FOR PRODUCTION THEREOF
摘要
The invention relates to a component with a transistor and method for production thereof. According to the invention, the cut-off voltage drift of PMOS transistors may be reduced, whereby a getter layer (14) with a thickness of at least 40 nm is provided in conductor tracks above the PMOS transistor.
申请公布号
WO0193335(A1)
申请公布日期
2001.12.06
申请号
WO2001DE02064
申请日期
2001.05.31
申请人
INFINEON TECHNOLOGIES AG;DAHL, CLAUS;JURK, REINHARD;ROEHNER, MICHAEL;GSCHWANDTNER, ALEXANDER;ROBL, WERNER;THEWES, ROLAND
发明人
DAHL, CLAUS;JURK, REINHARD;ROEHNER, MICHAEL;GSCHWANDTNER, ALEXANDER;ROBL, WERNER;THEWES, ROLAND
