| 摘要 |
This invention relates to a method for temperature compensating a radio frequency front-end CMOS circuit, the method comprising the step of generating a temperature compensated bias current, which step in turn comprises the steps of: determining the temperature characteristic of said temperature compensated bias current by simulating it with an ideal simulation current source, while tuning the absolute current value as well as a temperature coefficient thereof, said ideal simulation current source thereby generating an ideal simulation current corresponding to said temperature compensated bias current; and synthesizing said temperature compensated bias current by generating a first current, which has a fractional temperature coefficient similar to the fractional temperature coefficient of the ideal simulation current, and tuning said first current by means of a current source having substantially zero temperature coefficient. |
