Wiring structure of semiconductor device

摘要

A method is provided for wiring semiconductor integrated circuits which produces a shielding effect while increasing the wiring area to a small extent. On one side of each of a plurality signal wires, a shielding wire made of the same material and having the same length as the signal wire is provided. The shielding wires are set to the ground potential via aluminum wiring extended from GND pads. Shielding wire segments are separated by cranking points.