METHOD AND DEVICE FOR GROWING LARGE-VOLUME ORIENTED MONOCRYSTALS

摘要

The invention relates to a method for growing large-volume monocrystals with a uniform orientation and consisting of a melt of crystal raw material, in a device comprising a sealable housing (10) in which a melting vessel (20) with side walls (22), a bottom (24), a top opening (26) facing said bottom (24) and optionally a lid (28) are located; and at least one heating element (50, 50'). According to said method, a crystal raw material in the melting vessel (20) is heated with heating elements (50, 50') to a temperature above the melting point until a melt with a surface is formed. A monocrystal is then formed on the bottom of the melting vessel by lowering the temperature to at least the crystallisation point. Said monocrystal forms a solid/liquid interphase with the melt and grows towards the melt surface on said interphase, in a direction that is perpendicular to the interphase. An even interphase with a radius of curvature of at least one metre is produced during the crystal growing process by applying a vertical, axial temperature gradient between the bottom (24) of the melt vessel (20) and its top opening (26) and preventing heat from entering and/or leaving through the side walls (22).