OBJECT PROCESSING APPARATUS AND PLASMA FACILITY COMPRISING THE SAME
摘要
<p>An object processing apparatus in which a plasma is produced in a reaction passage where an object to be processed is passed under the atmospheric pressure by using a high-voltage electrode and a grounding electrode. Even a fluorine compound such as PFC containing CF4 can be effectively decomposed because it is caused to be in contact with the plasma in a small space for a sufficiently long time. The apparatus can be small and simple in structure and therefore can be attached to an individual process chamber.</p>
申请公布号
WO0191896(A1)
申请公布日期
2001.12.06
申请号
WO2001JP04437
申请日期
2001.05.28
申请人
THREE TEC CO., LTD.;ITATANI, RYOHEI HM;DEGUCHI, MIKIO;MEBARKI, BENCHERKI;TODA, TOSHIHIKO;BAN, HEITARO