发明名称 OBJECT PROCESSING APPARATUS AND PLASMA FACILITY COMPRISING THE SAME
摘要 <p>An object processing apparatus in which a plasma is produced in a reaction passage where an object to be processed is passed under the atmospheric pressure by using a high-voltage electrode and a grounding electrode. Even a fluorine compound such as PFC containing CF4 can be effectively decomposed because it is caused to be in contact with the plasma in a small space for a sufficiently long time. The apparatus can be small and simple in structure and therefore can be attached to an individual process chamber.</p>
申请公布号 WO0191896(A1) 申请公布日期 2001.12.06
申请号 WO2001JP04437 申请日期 2001.05.28
申请人 THREE TEC CO., LTD.;ITATANI, RYOHEI HM;DEGUCHI, MIKIO;MEBARKI, BENCHERKI;TODA, TOSHIHIKO;BAN, HEITARO 发明人 ISHIKAWA, TOSHIAKI DI;ITATANI, RYOHEI HM;DEGUCHI, MIKIO;MEBARKI, BENCHERKI;TODA, TOSHIHIKO;BAN, HEITARO
分类号 B01D53/32;B01D53/70;H05H1/24;(IPC1-7):B01J19/08 主分类号 B01D53/32
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