发明名称 HIGH BRIGHTNESS AND LOW VOLTAGE OPERATED LEDS BASED ON INORGANIC SALTS AS EMITTERS AND CONDUCTIVE MATERIALS AS CATHODIC CONTACTS
摘要 Solid-state light-emitting diodes (LEDs) are fabricated based on an amorphous or nanocrystalline film of Ru(bpy)3(ClO4)2(bpy = 2,2'-bipyridine) about 100 nm thick on indium tin oxide (ITO) and printed on stable conductive material including low melting point alloys (Ga:In, Ga:Sn and Bi:In:Pb:Sn) and ITO as cathodic contact. Devices with the structure of ITO(10</= OMEGA /square)/Ru(bpy)3(ClO4)2/Ga:Sn and the structure of ITO(10</= OMEGA /square)/Ru(bpy)3(ClO4)2/ITO produces a bright red emission (3500 cd/m<2> at 4.0 V) centered at 660 nm. This new method significantly simplifies the fabrication of an electroluminescence cell and has potential application in the production of OLEDs by inkjet or microcontact printing. LEDs based on Ru(bpy)3(ClO4)2, Ru(phenanthroline)3(ClO4)2, Os(bpy)3(PF6)2, and Tris(8-hydroxy-quinoline)aluminum(Alq3) are also presented.
申请公布号 WO0193346(A2) 申请公布日期 2001.12.06
申请号 WO2001US18043 申请日期 2001.05.31
申请人 BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM;GAO, FRANK, G.;LIU, CHONG-YANG;BUDA, MIHAI;BARD, ALLEN, J. 发明人 GAO, FRANK, G.;LIU, CHONG-YANG;BUDA, MIHAI;BARD, ALLEN, J.
分类号 H01L51/00;H01L51/30;H01L51/50;H01L51/52 主分类号 H01L51/00
代理机构 代理人
主权项
地址