Process for preparing a hydrogen sensor

摘要

A high-sensitivity Pd/InP hydrogen sensor was made by a) forming an n-type or p-type semiconductor film on a semiconductor substrate; b) forming a patterned first metal electrode on said semiconductor film, wherein said first metal electrode forms an Ohmic contact with said semiconductor film; and c) forming a second metal electrode on said semiconductor film, said second metal electrode being isolated from said first metal electrode, wherein said second metal electrode forms a Schottky contact with said semiconductor film, wherein a thickness of said second metal electrode and a material of which said second metal electrode is made enable a Schottky barrier height of said Schottky contact to decrease when hydrogen contacts said second metal electrode. The second metal electrode can be physical vapor deposited or electroless plated.