| 摘要 |
864,239. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Jan. 14, 1960 [Jan. 17, 1959], No. 1407/60: Class 37. In providing an alloy electrode on a semiconductor body, the rate of temperature rise during the heating process is reduced immediately before the eutectic temperature of the electrode and semi-conductor is reached. This allows for solid diffusion to provide a larger region consisting of eutectic composition so that when the eutectic temperature is reached the larger region of substantially uniform composition is melted. The process may be applied to a gold foil alloyed to a silicon body, the eutectic temperature then being about 370‹ C. Impurities may be included in the gold. |
