发明名称 A photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
摘要 A buffer layer with a composition of AlaGabIncN (a+b+c=1, a, b, c‰¥0) and a multilayered thin films with a composition of AlxGayInzN (x+y+z=1 x, y, z‰¥0) are formed in turn on a substrate. The Al component of the Al component-minimum portion of the buffer layer is set to be larger than that of at least the thickest layer of the multilayered thin films. The Al component of the buffer layer is decreased continuously or stepwise from the side of the substrate to the side of the multilayered thin films therein.
申请公布号 EP1160882(A2) 申请公布日期 2001.12.05
申请号 EP20010112409 申请日期 2001.05.21
申请人 NGK INSULATORS, LTD. 发明人 SHIBATA, TOMOHIKO;ASAI, KEIICHIRO;NAGAI, TERUYO;TANAKA, MITSUHIRO
分类号 H01L21/20;H01L21/205;H01L31/105;H01L33/00 主分类号 H01L21/20
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