Charge compensation semiconductor device and method of making the same

摘要

Compensation element has a drift path between two active zones and a stack of p- and n-conducting regions (3, 4) and a trough-like trench (2). The drift path is lead around the side surfaces and the base surface of the trench. An Independent claim is also included for the production of a compensation element comprising: (a) inserting a trench (2) into a semiconductor body (1) by anisotropic etching; (b) providing the base surface and the side surfaces with p- and n-conducting layers; (c) removing the layers on the surface of the semiconductor body in a planarizing step; and (d) filling the remaining trench on the layers with an insulating material (5) or silicon. The trench is preferably provided with an oxide filling in addition to the p- and n-conducting regions. The walls of the side surfaces are inclined at 55 degrees .