Method for fabricating a multilayer semiconductor device

摘要

Provided is a method for fabricating a compound semiconductor multilayer epitaxial substrate comprising a plurality of epitaxial layers, comprising the steps of determining at least one of the thickness, impurity concentration, and composition of an epitaxial layer comprising the multilayer epitaxial substrate by theoretical calculation, the theoretical calculation describing on electric field and charge distribution inside the epitaxial layer, and performing epitaxy of the epitaxial layer according to the theoretical calculation of the thickness, impurity concentration and/or composition of the epitaxial layer so that measurable electric characteristice of the substrate predetermined by the calculation are satisfied. The method can reduce the fabrication process and also can be applied to manufacture a multilayer epitaxial substrate having a unique structure.