| 摘要 |
PROBLEM TO BE SOLVED: To obtain a film-forming composition which can form a silica-base film excellent in low permittivity characteristics and resistance to oxygen plasma and in crack resistance after PCT. SOLUTION: This composition comprises (A) a condensate obtained by subjecting at least one compound selected from among compounds represented by the formula (1): Ra(Si)(OR1)4-a, the formula (2): Si(OR2)4, and the formula (3): R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c and a compound represented by the formula (4): R8eM(OR9)f-e [wherein R is H, F or a monovalent organic group; R7 is O, phenylene or (CH2)n; R8 is a chelating agent; M is a metal atom; R9 is a 2-5C alkyl or a 6-20C aryl; (a) is 1 or 2; (b) and (c) are each 0, 1 or 2; (d) is 0 or 1; (f) is a valence; (e) is an integer of 0-f; and (n) is an integer of 1-6] to hydrolysis and condensation and an organic solvent.
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