发明名称 |
Trench-diffusion corner rounding in a shallow-trench (STI) process |
摘要 |
An isolation structure on an integrated circuit is formed using a shallow trench isolation process. A layer of buffer oxide is formed on a substrate. A layer of nitride is formed on the layer of buffer oxide. The layer of nitride and the layer of buffer oxide are patterned to form a trench area. An oxidation of the substrate is performed to provide for round corners at a perimeter of the trench area. The substrate is then etched to form a trench within the trench area.
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申请公布号 |
US6326283(B1) |
申请公布日期 |
2001.12.04 |
申请号 |
US20000519908 |
申请日期 |
2000.03.07 |
申请人 |
VLSI TECHNOLOGY, INC. |
发明人 |
LIANG VICTOR;LAPARRA OLIVIER;RUBIN MARK |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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