| 发明名称 |
Integrated circuit isolation |
| 摘要 |
Silicon substrate isolation by epitaxial growth of silicon through windows in a mask made of silicon nitride (202) on silicon oxide (201) with the silicon oxide etched to undercut the silicon nitride; the mask is on a silicon substrate. |
| 申请公布号 |
US6326281(B1) |
申请公布日期 |
2001.12.04 |
| 申请号 |
US19990405278 |
申请日期 |
1999.09.23 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
VIOLETTE KATHERINE E.;WISE RICK L.;ASHBURN STANTON P.;NANDAKUMAR MAHALINGAM;GRIDER DOUGLAS T. |
| 分类号 |
H01L21/20;H01L21/205;H01L21/316;H01L21/762;(IPC1-7):H01L21/36 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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