| 摘要 |
A semiconductor memory device includes a plurality of block cores which are each treated as one unit at the erase time, an R/D block core which is used instead of a memory cell array of a cor6responding one of the block cores in which a defect occurs, an R/D address storing section for storing an address of a defective block, and an R/D address comparing section for comparing an output signal of the R/D address storing section with an output signal of a block address buffer. If the result of comparison in the R/D address comparing section indicates "coincidence", a block decoder in the R/D block core is set into a selected state and a block decoder in the defective block core is forcedly set into a non-selected state to replace the defective block core by the R/D block core.
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