发明名称 |
Split gate flash memory device with source line |
摘要 |
A method of forming split gate electrode MOSFET devices comprises the following steps. Form a tunnel oxide layer over a semiconductor substrate. Form a floating gate electrode layer over the tunnel oxide layer. Form a masking cap over the floating gate electrode layer. Pattern gate electrode stacks formed by the tunnel oxide layer and the floating gate electrode layer in the pattern of the masking cap. Pattern source line slots in the center of the gate electrode stacks down to the substrate. Form source regions at the base of the source lines slots. Form intermetal dielectric and control gate layers over the substrate covering the stacks. Pattern the intermetal dielectric and control gate layers into adjacent mirror image split gate electrode pairs. Form self-aligned drain regions.
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申请公布号 |
US6326662(B1) |
申请公布日期 |
2001.12.04 |
申请号 |
US20000633643 |
申请日期 |
2000.08.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
HSIEH CHIA-TA;LIN CHRONG JUNG;CHEN SHUI-HUNG;KUO DI-SON |
分类号 |
H01L21/8247;H01L27/115;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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地址 |
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