发明名称 Monolithic microsystem with mosaic of components and manufacturing method, for use in microelectronics
摘要 The monolithic microsystem comprises a set of components, functional (106a) and artificial (106b), each with a connection face (107), in a zone defined by a frame (104), where the components are linked by a binder in contact with the wafers of components, and the connection faces are coplanar so to form a flat surface, which is the connection surface of monolithic system. The manufacturing method comprises the following steps: (a) placing the components (106a, 106b) on a support (100) with an adhesive layer (102) so that the connection faces are in contact with the adhesive layer; (b) linking the components to form a monolithic structure; and (c) separating the monolithic structure from the support so to free the connection surface of monolithic system comprising the connection faces of components. After step (c), electrical connections between components are formed on the connection surface. The connection surface of microsystem is equipped with electrical and/or optical connections, and the connection means include contacts with fusible balls for connection to external devices and/or interconnection lines. The components are of the following types: diode, power diode, transistor, power transistor, logic integrated circuit, analytic integrated circuit, resistor, inductor, capacitor, resonator, photodetector, light-emitting diode, laser diode, micro-mirror, optical guide, integrated optical component, micro-sensor, micro-actuator, acoustic wave component, filter, gyrometer, magnetic component, micro-transformer, writing head, and artificial component. The manufacturing method comprises, before step (a), a preparation of the support to form the adhesive layer, which includes one of the following operations: placing a layer of fine wax, which is maintained at a temperature at which the wax is sticky, at the time of step (a), or placing a layer of auto-binder. At the time of step (c), the layer of wax is fused, or the layer of auto-binder is undone. The interstices between components are filled with a binder at step (b), and the binder is used to encapsulate the components with the formation of a free flat surface. The formation of connections includes making openings in a passivation layer formed on the connection faces of components, and the formation of strip conductors between connection poles. Before or after step (c), the monolithic structure is cut to individualize groups of components.
申请公布号 FR2809533(A1) 申请公布日期 2001.11.30
申请号 FR20000008627 申请日期 2000.07.03
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 GIDON PIERRE;GIFFARD BENOIT
分类号 H01L21/56;H01L21/68;H01L21/98;H01L23/538;H01L25/16 主分类号 H01L21/56
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