发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide an improved positive type photoresist composition which solves the problem of occurrence of development defects in the production of a semiconductor device. SOLUTION: The positive type photoresist composition contains (A) a resin containing repeating structural units each having a specified bridged alicyclic structure and repeating structural units each having a specified acetal structure and having a velocity of dissolution in an alkali developing solution increased by the action of an acid and (B) a compound which generates the acid when irradiated with active light or radiation.
申请公布号 JP2001330958(A) 申请公布日期 2001.11.30
申请号 JP20000150174 申请日期 2000.05.22
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;AOSO TOSHIAKI
分类号 G03F7/039;C08F220/10;C08F222/00;C08K5/00;C08L45/00;C08L101/08;G03F7/004;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址