发明名称 |
POSITIVE TYPE PHOTORESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide an improved positive type photoresist composition which solves the problem of occurrence of development defects in the production of a semiconductor device. SOLUTION: The positive type photoresist composition contains (A) a resin containing repeating structural units each having a specified bridged alicyclic structure and repeating structural units each having a specified acetal structure and having a velocity of dissolution in an alkali developing solution increased by the action of an acid and (B) a compound which generates the acid when irradiated with active light or radiation. |
申请公布号 |
JP2001330958(A) |
申请公布日期 |
2001.11.30 |
申请号 |
JP20000150174 |
申请日期 |
2000.05.22 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
SATO KENICHIRO;AOSO TOSHIAKI |
分类号 |
G03F7/039;C08F220/10;C08F222/00;C08K5/00;C08L45/00;C08L101/08;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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