| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration of the characteristics of elements, by controlling the magnitude of the step generated between an element isolating region and the surface of a silicon substrate, in a manufacturing method of an element isolating trench structure. SOLUTION: In the manufacturing method of an element isolating trench structure, after forming a trench in the substrate having silicon oxide and nitride films to bury an oxide in the trench, a portion of the oxide is so removed therefrom by a polishing treatment as to etch successively the silicon nitride and oxide films. Further, in the manufacturing method, by measuring in its respective processes the film thicknesses of the silicon nitride film and the heights of the oxide buried in the trench, the etching quantities in its element forming processes are controlled based on the measurements.
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