| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup device wherein high speed processing is enabled by making use of an advantage of an SOI wafer which is suitable for a digital circuit and dynamic range can be increased with photo sensitivity similar to a bulk wafer. SOLUTION: This solid-state image pickup device is provided with at least an internal photoelectric effect element D1, a reset transistor Tr1 connected with the internal photoelectric effect element, and a peripheral element Tr2 which is relative to the internal photoelectric effect element. The internal photoelectric effect element and the reset transistor are formed on an upper surface of a semiconductor wafer 2, and the peripheral element is formed above the semiconductor wafer by using SOI(silicon on insulator). Thereby high speed processing is enabled by making use of an advantage of an SOI wafer which is suitable for a digital circuit, and dynamic range is increased with photo sensitivity similar to a bulk wafer.
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