| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for evaluating the characteristics of an extremely thin insulation film formed on a substrate. SOLUTION: In the method for evaluating the characteristics or dimensions of an insulation film, e.g. a gate insulation film 3 of thermal oxidation film, provided on a silicon substrate 4 functioning entirely as a conductor layer, a bump supporting member 1 (measuring member) arranged with conductor bumps 2 being connected with a wiring 5 is placed on the gate insulation film 3 (insulation film) on the silicon substrate 4 (conductor layer). The conductor bumps 2 are pressed against the gate insulation film 3 with some pressing force by means of a pressing mechanism 6. Subsequently, I-V characteristics, gate leakage current, TDDB characteristics and dimensions, e.g. thickness, are evaluated by applying a voltage (electrical stress) between the conductor bumps 2 and the silicon substrate 4.
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