| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of fuses of a redundant circuit and to minimize pattern area. SOLUTION: This device is provided with plural memory cell mat 3 having a redundant memory cell area 5 and a redundant address line 7, and a redundant circuit 4 outputting a selecting signal selecting a desired memory cell mat 3, and the redundant circuit 4 is characterized in that the circuit is provided with a non-selection means (N channel type MOS transistor) in which a redundant address line of a non-selection memory cell mat is made non-selection forcedly in accordance with a memory cell mat selecting signal.
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