| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing technique which enables an island-like pattern, while holding clean a surface state of a semiconductor thin film constituting an element region of thin film transistors. SOLUTION: A thin film transistor has a lamination structure containing a semiconductor thin film 5, a gate insulation film 3 formed so as to come into contact with the surface, and a gate electrode 1 arranged on a surface side of a semiconductor thin film 5. Further, the transistor is formed in a predetermined flat surface profile on a substrate 0. In order to manufacture this, first, a first step is carried on that the semiconductor thin film 5 having a clean surface is formed on an upper surface of the substrate 0. Next, a second step is carried on that a protection film PF is formed so as to coat a clean surface of the semiconductor thin film 5. Furthermore, a third step is carried on that the semiconductor thin film 5 is patterned along with the protection film PF in conformity to a flat surface profile of the thin film transistor. After that, a fourth step is carried on that the protection film PF is removed from the patterned semiconductor thin film 5 to expose the clean surface. Consecutively, a fifth step is carried on that the gate insulation film 3 is formed so as to come into contact with the exposed surface of the semiconductor thin film 5.</p> |
