| 摘要 |
PROBLEM TO BE SOLVED: To obtain a developing device where voltage different from that of a developer carrier 11 is applied to a contact member brought into contact with the surface of the developer carrier provided with plural layers and where charge given by the contact member is prevented from being guided to the developer carrier in a state where it is held on the surface of the developer carrier, and the voltage applied to the contact member is prevented from influencing developing bias voltage. SOLUTION: When it is assumed in this developing device that a distance from a position where the contact member 15 comes into contact with the surface of the developer carrier 11 to a developing area is D(mm) and the speed of the surface of the developer carrier is v(mm/s), potential by the voltage applied to the surface of the developer carrier from the contact member is set to <=20 V for D/v seconds, and impedance Z1 between a conductive base substance 11a and the surface provided with plural layers 11b to 11d and impedance Z2 between the surface of the developer carrier and the surface through a distance (d) are set to satisfy a condition Z1<Z2. |
