| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride based compound semiconductor light emitting element excellent in luminous efficiency, in particular, a semiconductor laser in which the threshold current is lowered, by laminating nitride based compound semiconductor layers which can obtain flatness in a wide region, while dislocation density is reduced by selective growth on a mask like SiO2. SOLUTION: On a substrate 1, a first GaN layer 2 is formed on which a mask layer 3 having an aperture part 3a is formed. Thereon, a second GaN layer 4 is formed which is grown selectively in the transversal direction from the aperture part 3a, and a nitride based compound semiconductor laminated part 15 which is laminated so as to form a light emitting layer is formed. A recessed part 3b is formed on the upper surface side of the mask layer 3. In other words, the second GaN based compound semiconductor layer 4 is so grown that an almost parallel gap 3c is formed between the bottom surface of the second GaN layer 4 and the mask layer 3 by, e.g. the recessed part 3b on the upper surface side of the mask layer 3. |
